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| MMSZ2V4ET1 Series Zener Voltage Regulators 500 mW SOD-123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD-123 package. These devices provide a convenient alternative to the leadless 34-package style. Specification Features http://onsemi.com * * * * * * * 500 mW Rating on FR-4 or FR-5 Board Wide Zener Reverse Voltage Range - 2.4 V to 56 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (>16 kV) per Human Body Model Peak Power - 225 W (8 X 20 ms) Pb-Free Packages are Available 1 Cathode 2 Anode 2 1 Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: SOD-123 CASE 425 STYLE 1 260C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V-0 MAXIMUM RATINGS Rating Peak Power Dissipation @ 20 ms (Note 1) @ TL 25C Total Power Dissipation on FR-5 Board, (Note 2) @ TL = 75C Derated above 75C Thermal Resistance, Junction-to-Ambient (Note 3) Thermal Resistance, Junction-to-Lead (Note 3) Junction and Storage Temperature Range Symbol Ppk PD 500 6.7 RqJA RqJL TJ, Tstg 340 150 -55 to +150 mW mW/C C/W C/W Max 225 Unit W MARKING DIAGRAM xxx = Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION C Device MMSZxxxET1 Package SOD-123 (Pb-Free) SOD-123 (Pb-Free) Shipping 3000/Tape & Reel Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 11 2. FR-5 = 3.5 X 1.5 inches, using the ON minimum recommended footprint 3. Thermal Resistance measurement obtained via infrared Scan Method MMSZxxxET3 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. (c) Semiconductor Components Industries, LLC, 2006 1 January, 2006 - Rev. 5 AA AA AA xxx M G G 10,000/Tape & Reel Publication Order Number: MMSZ2V4ET1/D MMSZ2V4ET1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) Symbol VZ IZT ZZT IR VR IF VF Parameter Reverse Zener Voltage @ IZT Reverse Current Maximum Zener Impedance @ IZT Reverse Leakage Current @ VR Reverse Voltage Forward Current Forward Voltage @ IF VZ VR IR VF IZT V I IF Zener Voltage Regulator http://onsemi.com 2 MMSZ2V4ET1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) VZ1 (V) (Notes 4 and 5) Device Marking CL1 CL2 CL3 CL4 CL5 CL6 CL7 CL8 CL9 CM1 CM2 CM3 CM4 CM5 CM6 CM7 CM8 CM9 CN1 CN2 CN3 CN4 CN5 CN6 CN7 @ IZT1 = 5 mA Min 2.28 2.57 2.85 3.14 3.42 3.71 4.09 4.47 4.85 5.32 5.89 6.46 7.13 7.79 8.65 9.50 10.45 11.40 12.35 14.25 15.20 17.10 19.00 20.90 22.80 Nom 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 Max 2.52 2.84 3.15 3.47 3.78 4.10 4.52 4.94 5.36 5.88 6.51 7.14 7.88 8.61 9.56 10.50 11.55 12.60 13.65 15.75 16.80 18.90 21.00 23.10 25.20 W 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 Min 1.7 1.9 2.1 2.3 2.7 2.9 3.3 3.7 4.2 4.8 5.6 6.3 6.9 7.6 8.4 9.3 10.2 11.2 12.3 13.7 15.2 16.7 18.7 20.7 22.7 ZZT1 (Note 6) VZ2 (V) (Notes 4 and 5) ZZT2 (Note 6) Max Reverse Leakage Current IR @ VR W 600 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 mA 50 20 10 5 5 3 3 3 2 1 3 2 1 0.7 0.5 0.2 0.1 0.1 0.1 0.05 0.05 0.05 0.05 0.05 0.05 V 1 1 1 1 1 1 1 2 2 2 4 4 5 5 6 7 8 8 8 10.5 11.2 12.6 14 15.4 16.8 @ IZT2 = 1 mA Max 2.1 2.4 2.7 2.9 3.3 3.5 4.0 4.7 5.3 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.0 15.5 17.0 19.0 21.1 23.2 25.5 Device MMSZ2V4ET1, G MMSZ2V7ET1, G MMSZ3V0ET1 MMSZ3V3ET1, G MMSZ3V6ET1, G MMSZ3V9ET1, G MMSZ4V3ET1 MMSZ4V7ET1 MMSZ5V1ET1, G MMSZ5V6ET1 MMSZ6V2ET1 MMSZ6V8ET1 MMSZ7V5ET1 MMSZ8V2ET1 MMSZ9V1ET1 MMSZ10ET1, G MMSZ11ET1 MMSZ12ET1, G MMSZ13ET1 MMSZ15ET1, G MMSZ16ET1, G MMSZ18ET1, G MMSZ20ET1, G MMSZ22ET1, G MMSZ24ET1 4. The type numbers shown have a standard tolerance of 5% on the nominal Zener Voltage. 5. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms. 6. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1 kHz. Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. * The "G" suffix indicates Pb-Free package available. http://onsemi.com 3 MMSZ2V4ET1 Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) VZ1 (V) (Notes 7 and 8) @ IZT1 = 2 mA Min 25.65 28.50 31.35 34.20 37.05 40.85 44.65 48.45 53.20 Nom 27 30 33 36 39 43 47 51 56 Max 28.35 31.50 34.65 37.80 40.95 45.15 49.35 53.55 58.80 W 80 80 80 90 130 150 170 180 200 ZZT1 (Note 9) VZ2 (V) (Notes 7 and 8) @ IZT2 = 0.1 mA Min 25 27.8 30.8 33.8 36.7 39.7 43.7 47.6 51.5 Max 28.9 32 35 38 41 46 50 54 60 ZZT2 (Note 9) @ IZT2 = 0.5 mA W 300 300 325 350 350 375 375 400 425 Max Reverse Leakage Current IR @ VR mA 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 V 18.9 21 23.1 25.2 27.3 30.1 32.9 35.7 39.2 Device MMSZ27ET1, G MMSZ30ET1 MMSZ33ET1 MMSZ36ET1 MMSZ39ET1 MMSZ43ET1, G MMSZ47ET1 MMSZ51ET1 MMSZ56ET1 Device Marking CN8 CN9 CP1 CP2 CP3 CP4 CP5 CP6 CP7 7. The type numbers shown have a standard tolerance of 5% on the nominal Zener Voltage. 8. Tolerance and Voltage Designation: Zener Voltage (VZ) is measured with the Zener Current applied for PW = 1 ms. 9. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC), with the AC frequency = 1 kHz. Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. * The "G" suffix indicates Pb-Free package available. http://onsemi.com 4 MMSZ2V4ET1 Series TYPICAL CHARACTERISTICS 8 7 6 5 4 3 2 1 0 -1 VZ @ IZT TYPICAL TC VALUES FOR MMSZ2V4T1 SERIES 100 TYPICAL TC VALUES FOR MMSZ2V4T1 SERIES VZ , TEMPERATURE COEFFICIENT (mV/ C) VZ , TEMPERATURE COEFFICIENT (mV/ C) VZ @ IZT 10 -2 1-3 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 12 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 Figure 1. Temperature Coefficients (Temperature Range - 55C to +150C) Figure 2. Temperature Coefficients (Temperature Range - 55C to +150C) Ppk, PEAK SURGE POWER (WATTS) 1.2 P D, POWER DISSIPATION (WATTS) 1.0 0.8 0.6 0.4 0.2 0 PD versus TL 1000 RECTANGULAR WAVEFORM, TA = 25C 100 PD versus TA 10 0 25 50 75 100 T, TEMPERATURE (C) 125 150 1 0.1 1 10 100 PW, PULSE WIDTH (ms) 1000 Figure 3. Steady State Power Derating Figure 4. Maximum Nonrepetitive Surge Power 1000 Z ZT, DYNAMIC IMPEDANCE ( ) TJ = 25C IZ(AC) = 0.1 IZ(DC) f = 1 kHz 1000 IF, FORWARD CURRENT (mA) 75 V (MMSZ5267BT1) 91 V (MMSZ5270BT1) IZ = 1 mA 5 mA 20 mA 10 100 100 10 150C 1 0.4 25C 0C 75C 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) 1.1 1.2 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 0.5 Figure 5. Effect of Zener Voltage on Zener Impedance Figure 6. Typical Forward Voltage http://onsemi.com 5 MMSZ2V4ET1 Series TYPICAL CHARACTERISTICS 1000 0 V BIAS 1 V BIAS C, CAPACITANCE (pF) 100 BIAS AT 50% OF VZ NOM 10 TA = 25C 1000 I R , LEAKAGE CURRENT (A) 100 10 1 0.1 +150C 0.01 + 25C -55C 10 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) 80 90 0.001 0.0001 1 1 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 0.00001 0 Figure 7. Typical Capacitance 100 TA = 25C I Z , ZENER CURRENT (mA) I Z , ZENER CURRENT (mA) 10 10 100 Figure 8. Typical Leakage Current TA = 25C 1 1 0.1 0.1 0.01 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 10 12 0.01 10 30 50 70 VZ, ZENER VOLTAGE (V) 90 Figure 9. Zener Voltage versus Zener Current (VZ Up to 12 V) Figure 10. Zener Voltage versus Zener Current (12 V to 91 V) 100 % OF PEAK PULSE CURRENT 90 80 70 60 50 40 30 20 10 0 0 tP tr PEAK VALUE IRSM @ 8 ms PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms HALF VALUE IRSM/2 @ 20 ms 20 40 t, TIME (ms) 60 80 Figure 11. 8 x 20 ms Pulse Waveform http://onsemi.com 6 MMSZ2V4ET1 Series PACKAGE DIMENSIONS SOD-123 CASE 425-04 ISSUE E D A A1 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A A1 b c D E HE L MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 --- --- 0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 --- --- 0.25 MIN 0.037 0.000 0.020 --- 0.055 0.100 0.140 0.010 INCHES NOM 0.046 0.002 0.024 --- 0.063 0.106 0.145 --- MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 --- HE 2.36 0.093 4.19 0.165 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 7 EE EE EE EE EE EE AAAA AAAA 2 E L C STYLE 1: PIN 1. CATHODE 2. ANODE b SOLDERING FOOTPRINT* 0.91 0.036 1.22 0.048 SCALE 10:1 mm inches MMSZ2V4ET1/D |
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